Passively modelocked GaInNAs VECSEL at centre wavelength around 1.3μm

Electronics Letters

Volumn 42, Issue 16, 2006, Pages 926-927

  Rutz, A ^a   Liverini, V ^a   Maas, D J H C ^a   Rudin, B ^a   Bellancourt, A R ^a   Schon S ^a   Keller, U ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROMAGNETIC WAVE EMISSION; LASER MODE LOCKING; LASERS; OPTICALLY PUMPED LASERS; POWER AMPLIFIERS; PULSE WIDTH MODULATION; SEMICONDUCTOR DIODES; SEMICONDUCTOR LASERS;

SELF-STARTING MODELOCKING; SEMICONDUCTOR DIODE LASER; VERTICAL-EXTERNAL-CAVITY SURFACE-EMITTING LASER (VECSEL); WAVELENGTH;

GALLIUM COMPOUNDS;

EID: 33746883206     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20061793     Document Type: Article

References (10)

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3. Kondow, M.: et al. ' GaInNAs: a novel material for long-wavelength semiconductor lasers ', IEEE J. Sel. Top. Quantum Electron., 1997, 3, p. 719-30 10.1109/2944.640627 1077-260X
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5. Hopkins, J.M.: et al. ' 0.6W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32m ', Electron. Lett., 2004, 40, p. 30-31 10.1049/el:20040049 0013-5194
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7. Häring, R.: et al. ' Picosecond surface-emitting semiconductor laser with >200mW average power ', Electron. Lett., 2001, 37, p. 766-767 0013-5194
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