-
2
-
-
7244231713
-
Field electron emission of diamond films on nanocrystalline diamond coating by CVD method
-
Cai R Q, Chen G H, Song X M, et al. Field electron emission of diamond films on nanocrystalline diamond coating by CVD method. Chin Sci Bull, 2003, 48(12): 1282-1285
-
(2003)
Chin Sci Bull
, vol.48
, Issue.12
, pp. 1282-1285
-
-
Cai, R.Q.1
Chen, G.H.2
Song, X.M.3
-
3
-
-
0000521521
-
Absolute photoyield from chemical vapor-deposited diamond and diamond-like carbon films in the UV
-
Breskin A, Chechik R, Shefer E, et al. Absolute photoyield from chemical vapor-deposited diamond and diamond-like carbon films in the UV. Appl Phys Lett, 1997, 70(25): 3446-3348
-
(1997)
Appl Phys Lett
, vol.70
, Issue.25
, pp. 3446-13348
-
-
Breskin, A.1
Chechik, R.2
Shefer, E.3
-
4
-
-
0036607273
-
Homoepitaxial single-crystal boron-doped diamond electrodes for electroanalysis
-
Kondo T, Einaga Y, Sarada B V, et al. Homoepitaxial single-crystal boron-doped diamond electrodes for electroanalysis. J Electrochem Soc, 2002, 149: E179-E184
-
(2002)
J Electrochem Soc
, vol.149
-
-
Kondo, T.1
Einaga, Y.2
Sarada, B.V.3
-
5
-
-
0037040334
-
Electrochemical detection of tricyclic antidepressant drugs by HPLC using highly boron-doped diamond electrodes
-
Ivandini T A, Sarada B V, Terashima C, et al. Electrochemical detection of tricyclic antidepressant drugs by HPLC using highly boron-doped diamond electrodes. J Electroanal Chem, 2002, 521(1-2): 117-126
-
(2002)
J Electroanal Chem
, vol.521
, Issue.1-2
, pp. 117-126
-
-
Ivandini, T.A.1
Sarada, B.V.2
Terashima, C.3
-
6
-
-
0034228455
-
Chlorine evolution at highly boron-doped diamond electrodes
-
Ferro S, Battisti A D, Dao I, et al. Chlorine evolution at highly boron-doped diamond electrodes. J Electrochem Soc, 2000, 147(7): 2614-2619
-
(2000)
J Electrochem Soc
, vol.147
, Issue.7
, pp. 2614-2619
-
-
Ferro, S.1
Battisti, A.D.2
Dao, I.3
-
7
-
-
0002881656
-
Hydrogen chemisorption and the structure of the diamond C(100)-(2×1) surface
-
Hamza A V, Kubiak G D, Stulen R H. Hydrogen chemisorption and the structure of the diamond C(100)-(2×1) surface. Surf Sci, 1990, 237: 35
-
(1990)
Surf Sci
, vol.237
, pp. 35
-
-
Hamza, A.V.1
Kubiak, G.D.2
Stulen, R.H.3
-
8
-
-
0002450034
-
Oxidation of the hydrogenated diamond (100) surface
-
Phersson P E, Mercer T W. Oxidation of the hydrogenated diamond (100) surface. Surf Sci, 2000, 460(1-3): 49-66
-
(2000)
Surf Sci
, vol.460
, Issue.1-3
, pp. 49-66
-
-
Phersson, P.E.1
Mercer, T.W.2
-
9
-
-
0000314923
-
Investigation of the effect of hydrogen on electrical and optical properties in chemical vapor deposited on homoepitaxial diamond films
-
Hayashi K, Yamanaka S, Watanabe H. Investigation of the effect of hydrogen on electrical and optical properties in chemical vapor deposited on homoepitaxial diamond films. J Appl Phys, 1997, 81(2): 744-753
-
(1997)
J Appl Phys
, vol.81
, Issue.2
, pp. 744-753
-
-
Hayashi, K.1
Yamanaka, S.2
Watanabe, H.3
-
10
-
-
0035449312
-
Relationships between surface character and electrochemical processes on diamond electrodes: Dual roles of surface termination and near-surface hydrogen
-
Tryk D A, Tsunozaki K, Rao T N, et al. Relationships between surface character and electrochemical processes on diamond electrodes: dual roles of surface termination and near-surface hydrogen. Diamond Rel Mater, 2001, 10(9-10): 1804-1809
-
(2001)
Diamond Rel Mater
, vol.10
, Issue.9-10
, pp. 1804-1809
-
-
Tryk, D.A.1
Tsunozaki, K.2
Rao, T.N.3
-
11
-
-
0032473284
-
Effect of annealing and hydrogen plasma treatment on the voltammetric and impedance behavior of the diamond electrode
-
Ramesham R. Effect of annealing and hydrogen plasma treatment on the voltammetric and impedance behavior of the diamond electrode. Thin Solid Films, 1998, 315(1-2): 222-228
-
(1998)
Thin Solid Films
, vol.315
, Issue.1-2
, pp. 222-228
-
-
Ramesham, R.1
-
12
-
-
2442526493
-
Influence of hydrogen plasma treatment on electrochemical behavior of moderately and highly boron doped diamond electrodes
-
Simon N, Bullutaud D, Herlem M, et al. Influence of hydrogen plasma treatment on electrochemical behavior of moderately and highly boron doped diamond electrodes. Diamond Rel Mater, 2004, 13(4-8): 1050-1053
-
(2004)
Diamond Rel Mater
, vol.13
, Issue.4-8
, pp. 1050-1053
-
-
Simon, N.1
Bullutaud, D.2
Herlem, M.3
-
13
-
-
28244459374
-
Temperature-dependent transport properties of hydrogen-induced diamond surface conductive channels
-
Garrido J A, Heimbeck T, Stutzmann M. Temperature-dependent transport properties of hydrogen-induced diamond surface conductive channels. Phys Rev B, 2005, 71(24): 245310-245317
-
(2005)
Phys Rev B
, vol.71
, Issue.24
, pp. 245310-245317
-
-
Garrido, J.A.1
Heimbeck, T.2
Stutzmann, M.3
-
14
-
-
0035880951
-
Atomic structure of diamond {111} surfaces etched in oxygen water vapor
-
de Theije F K, Reedijk M F, Arsic J, et al. Atomic structure of diamond {111} surfaces etched in oxygen water vapor. Phys Rev B, 2001, 64(8): 085403-085409
-
(2001)
Phys Rev B
, vol.64
, Issue.8
, pp. 85403-85409
-
-
De Theije, F.K.1
Reedijk, M.F.2
Arsic, J.3
-
15
-
-
1842531013
-
Electrochemistry of diamond: A review
-
Pleskov Y V. Electrochemistry of diamond: A review. Russ J Electrochem, 2002, 38(12): 1275-1291
-
(2002)
Russ J Electrochem
, vol.38
, Issue.12
, pp. 1275-1291
-
-
Pleskov, Y.V.1
-
16
-
-
0038237645
-
Influence of thin film properties on the electrochemical performance of diamond electrodes
-
Hian L C, Grehan K J, Compton R G, et al. Influence of thin film properties on the electrochemical performance of diamond electrodes. Diamond Rel Mater, 2003, 12(3-7): 590-595
-
(2003)
Diamond Rel Mater
, vol.12
, Issue.3-7
, pp. 590-595
-
-
Hian, L.C.1
Grehan, K.J.2
Compton, R.G.3
-
17
-
-
0037463275
-
Impedance study on electrochemical characteristics of sputtered DLC films
-
Zeng A, Liu E, Zhang S, et al. Impedance study on electrochemical characteristics of sputtered DLC films. Thin Solid Films, 2003, 426: 258-264
-
(2003)
Thin Solid Films
, vol.426
, pp. 258-264
-
-
Zeng, A.1
Liu, E.2
Zhang, S.3
-
18
-
-
0032845253
-
Polycrystalline diamond electrodes: Basic properties and applications as amperometric detectors in flow injection analysis and liquid chromatography
-
Granger M C, Xu J, Strojek J W, et al. Polycrystalline diamond electrodes: Basic properties and applications as amperometric detectors in flow injection analysis and liquid chromatography. Anal Chimica Acta, 1999, 397: 145-161
-
(1999)
Anal Chimica Acta
, vol.397
, pp. 145-161
-
-
Granger, M.C.1
Xu, J.2
Strojek, J.W.3
-
19
-
-
0034205182
-
Electrical conduction of high-conductivity layers near the surfaces in hydrogenated homoepitaxial diamond films
-
Yamanaka S, Takeuchi D, Watanabe H, et al. Electrical conduction of high-conductivity layers near the surfaces in hydrogenated homoepitaxial diamond films. Appl Surf Sci, 2000, 159-160: 567-571
-
(2000)
Appl Surf Sci
, vol.159-160
, pp. 567-571
-
-
Yamanaka, S.1
Takeuchi, D.2
Watanabe, H.3
-
20
-
-
21544461604
-
Electrical properties of hydrogenated diamond
-
Albin S, Watkins L. Electrical properties of hydrogenated diamond. Appl Phys Lett, 1990, 56(15): 1454-1456
-
(1990)
Appl Phys Lett
, vol.56
, Issue.15
, pp. 1454-1456
-
-
Albin, S.1
Watkins, L.2
-
21
-
-
18144443712
-
Origin of surface conductivity in diamond
-
Maier F, Ristein J, Mantel B, et al. Origin of surface conductivity in diamond. Phys Rev Lett, 2000, 85(16): 3472-3475
-
(2000)
Phys Rev Lett
, vol.85
, Issue.16
, pp. 3472-3475
-
-
Maier, F.1
Ristein, J.2
Mantel, B.3
-
22
-
-
0001352040
-
Electron affinity of plasma-hydrogenated and chemically oxidized diamond (100) surfaces
-
Maier F, Ristein J, Ley L. Electron affinity of plasma-hydrogenated and chemically oxidized diamond (100) surfaces. Phys Rev B, 2001, 64(16): 165411-165417
-
(2001)
Phys Rev B
, vol.64
, Issue.16
, pp. 165411-165417
-
-
Maier, F.1
Ristein, J.2
Ley, L.3
-
23
-
-
0001161457
-
Ab initio calculation of electron affinities of diamond surfaces
-
Rutter M J, Robertson J. Ab initio calculation of electron affinities of diamond surfaces. Phys Rev B, 1998, 57(15): 9241-9245
-
(1998)
Phys Rev B
, vol.57
, Issue.15
, pp. 9241-9245
-
-
Rutter, M.J.1
Robertson, J.2
-
24
-
-
0001172563
-
Electron affinity and Schottky barrier height of metal-diamond (100), (111), (110) interfaces
-
Baumann P K, Nemanich R J. Electron affinity and Schottky barrier height of metal-diamond (100), (111), (110) interfaces. J Appl Phys, 1998, 83(4): 2072-2082
-
(1998)
J Appl Phys
, vol.83
, Issue.4
, pp. 2072-2082
-
-
Baumann, P.K.1
Nemanich, R.J.2
|