Plasma-assisted MBE of InGaN epilayers with atomically smooth and nanocolumnar morphology, grown on MOVPE GaN/Al2O3 templates

Journal of Crystal Growth

Volumn 301-302, Issue SPEC. ISS., 2007, Pages 469-472

  Jmerik, V N ^a   Mizerov, A M ^a   Shubina, T V ^a   Yagovkina, M ^a   Listoshin, V B ^a   Sitnikova, A A ^a   Ivanov, S V ^a   Kim, M H ^b   Koike, M ^b   Kim, B J ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b Samsung Electro Mechanics   (South Korea)

Author keywords

A1. InGaN; A1. Localization; A1. Phase separation; A1. Photoluminescence; A3. Molecular beam epitaxy; B1. Nitrides

Indexed keywords

EPILAYERS; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; MORPHOLOGY; NITRIDES; PHASE SEPARATION; PHOTOLUMINESCENCE;

BUFFER STRUCTURES; NANOCOLUMNAR MORPHOLOGY; SPATIAL DISTRIBUTION;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 33947316725     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.158     Document Type: Article

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