Stress distribution mapping of GaAs on Si conformal layers

Journal of Applied Physics

Volumn 101, Issue 5, 2007, Pages

  Martinez O ^a   Sanz, L F ^a   Jimnez J ^a   Martin Martin A ^a   Grard B ^b   Gil Lafon, E ^c  

^a UNIVERSITY OF VALLADOLID   (Spain)

^b ALCATEL THALES III V LAB   (France)

^c UNIVERSITÉ CLERMONT AUVERGNE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; CONFORMAL MAPPING; RAMAN SCATTERING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH;

CONFORMAL LAYERS; MICRO RAMAN STUDIES; QUASIPERIODIC MODULATION; STRESS LEVEL VARIATIONS;

STRESS CONCENTRATION;

EID: 33947306426     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2436840     Document Type: Article

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