Temperature dependence of the Raman shift in GaAs conformal layers grown by hydride vapor phase epitaxy

Journal of Applied Physics

Volumn 91, Issue 8, 2002, Pages 5045-5050

  Ardila, A M ^a,b   Martinez O ^b   Avella, M ^b   Jimenez J ^b   Gerard B ^c   Napierala, J ^d   Gil Lafon, E ^d  

^a UNIVERSIDAD NACIONAL DE COLOMBIA   (Colombia)

^b UNIVERSITY OF VALLADOLID   (Spain)

^c THALES   (France)

^d CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANHARMONIC PHONONS; COMPLIANT LAYER; CONFORMAL GROWTH; DISLOCATION DENSITIES; GAAS; HIGH DENSITY; HYDRIDE VAPOR PHASE EPITAXY; RAMAN DATA; RAMAN SHIFT; ROOM TEMPERATURE; SI SUBSTRATES; TEMPERATURE DEPENDENCE;

EPITAXIAL GROWTH; GALLIUM ARSENIDE; RAMAN SCATTERING; SEMICONDUCTING GALLIUM COMPOUNDS; SILICON; SUBSTRATES; TENSILE STRAIN; VAPORS;

SEMICONDUCTING GALLIUM;

EID: 0037091714     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1462849     Document Type: Article

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