Temperature dependence of residual stress in epitaxial GaAs/Si(100) films determined from photoreflectance spectroscopy data

Semiconductors

Volumn 34, Issue 1, 2000, Pages 73-80

  Kuz'menko, R V ^a   Ganzha, A V ^a   Bochurova, O V ^a   Domashevskaya, E P ^a   Schreiber, J ^b   Hildebrandt, S ^b   Mo, S ^c   Peiner, E ^c   Schlachetzki, A ^c  

^a VORONEZH STATE UNIVERSITY   (Russian Federation)

^b MARTIN LUTHER UNIVERSITY HALLE WITTENBERG   (Germany)

^c TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033631932     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1187949     Document Type: Article

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