Improved short-channel FET performance with virtual extensions

IEEE Transactions on Electron Devices

Volumn 53, Issue 1, 2006, Pages 146-152

  Connelly, Daniel ^a   Faulkner, Carl ^a   Clifton, P A ^a   Grupp, D E ^a  

^a Acorn Technologies   (United States)

Author keywords

CMOS; MOS devices; MOSFETs; Semiconductor device modeling, silicon, simulation

Indexed keywords

CAPACITANCE; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; DOPING (ADDITIVES); ELECTRIC CHARGE; ELECTRIC INSULATORS; ELECTROSTATICS;

ELECTROSTATIC COUPLINGS; SEMICONDUCTOR DEVICE MODELING; SHORT-CHANNEL DEVICE;

FIELD EFFECT TRANSISTORS;

EID: 33947177903     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.860778     Document Type: Article

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