Influence of kink effect on noise measurements in InP substrate PHEMTs at microwave frequencies

Solid-State Electronics

Volumn 39, Issue 10, 1996, Pages 1423-1426

  Rouquette, P ^a   Gasquet, D ^a   Barberousse, F ^a   De Raedt, W ^b   Baeyens, Y ^b  

^a UNIVERSITÉ MONTPELLIER II   (France)

^b IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; EQUIVALENT CIRCUITS; GATES (TRANSISTOR); NATURAL FREQUENCIES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SIGNAL NOISE MEASUREMENT;

KINK EFFECT; TIME CONSTANTS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0030269101     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(96)00066-4     Document Type: Review

References (6)

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