The physical background of JUNGAP2

IEEE Transactions on Electron Devices

Volumn 53, Issue 9, 2006, Pages 2098-2107

  Scholten, Andries J ^b   Smit, Geert D J ^b   Durand, Marie ^b   Van Langevelde, Ronald ^a,b   Klaassen, Dirk B M ^a,b  

^a IEEE

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

Compact model; JUNCAP2; Junction leakage; Junctions; PSP model

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC FIELD EFFECTS; ELECTRON TUNNELING; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR JUNCTIONS; SHOT NOISE;

COMPACT MODELS; JUNCTION LEAKAGE; PSP MODELS; TRAP ASSISTED TUNNELING (TAT) CURRENT;

CMOS INTEGRATED CIRCUITS;

EID: 33947128567     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.881004     Document Type: Article

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