A New Analytical Diode Model Including Tunneling and Avalanche Breakdown

IEEE Transactions on Electron Devices

Volumn 39, Issue 9, 1992, Pages 2090-2098

  Hurkx, G A M ^a   De Graaff, H C ^a   Kloosterman, W J ^a   Knuvers, M P G ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; INTEGRAL EQUATIONS; SEMICONDUCTOR JUNCTIONS; THERMAL EFFECTS; TUNNEL DIODES;

DEPLETION LAYERS; HOLE CONTINUITY EQUATION;

AVALANCHE DIODES;

EID: 0026923596     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.155882     Document Type: Article

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