Electrical characteristics of poly(3-hexylthiophene) organic thin film transistor with electroplated metal gate electrodes on polyimide

Thin Solid Films

Volumn 515, Issue 12, 2007, Pages 5065-5069

  Seol, Y G ^a   Lee, J G ^a   Lee, N E ^a   Seol Lee, Sang ^b   Ahn, Jinho ^b  

^a Sungkyunkwan University   (South Korea)

^b Hanyang University   (South Korea)

Author keywords

Flexible devices; Ni electroplating; Organic thin film transistor; P3HT

Indexed keywords

ELECTRIC SPACE CHARGE; ELECTROPLATING; GATES (TRANSISTOR); GRAPHITE ELECTRODES; PHOTORESISTS; POLYIMIDES;

FLEXIBLE DEVICES; GATE ELECTRODES; NICKEL ELECTROPLATING; ORGANIC THIN FILM TRANSISTOR; SPACE-CHARGE LIMITED CURRENT (SCLC);

THIN FILM TRANSISTORS;

EID: 33947100854     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.10.018     Document Type: Article

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