Electrical and optical properties of ZnO (0001̄) wafers implanted with argon

Journal of Applied Physics

Volumn 101, Issue 2, 2007, Pages

  Adekore, B T ^a   Davis, R F ^a,b   Barlage, D W ^a  

^a North Carolina State University   (United States)

^b CARNEGIE MELLON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE-VOLTAGE MEASUREMENTS; IMPLANTED WAFERS;

ANNEALING; ARGON; CAPACITANCE MEASUREMENT; CURRENT VOLTAGE CHARACTERISTICS; ION IMPLANTATION; PHOTOLUMINESCENCE; POINT DEFECTS; SILICON WAFERS;

ZINC OXIDE;

EID: 33847765008     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2409745     Document Type: Article

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