-
1
-
-
0030399938
-
Quasi-steady-state photoconductance, a new method for solar cell material and device characterization
-
Anaheim
-
Sinton RA, Cuevas A, Stuckings M. Quasi-steady-state photoconductance, a new method for solar cell material and device characterization. Proceedings of the 25th IEEE Photovoltaic Specialists Conference, Anaheim, 1996; 457-460.
-
(1996)
Proceedings of the 25th IEEE Photovoltaic Specialists Conference
, pp. 457-460
-
-
Sinton, R.A.1
Cuevas, A.2
Stuckings, M.3
-
3
-
-
0031097690
-
Prediction of the open-circuit voltage of solar cells from the steady-state photoconductance
-
Cuevas A, Sinton RA. Prediction of the open-circuit voltage of solar cells from the steady-state photoconductance. Progress in Photovoltaics: Research and Applications 1997; 5: 79-90.
-
(1997)
Progress in Photovoltaics: Research and Applications
, vol.5
, pp. 79-90
-
-
Cuevas, A.1
Sinton, R.A.2
-
4
-
-
0000703152
-
Unusually low surface recombination velocity on silicon and germanium surfaces
-
DOI: 10.1103/PhysRevLett.57.249
-
Yablonovitch A, Allara DL, Chang CC, Gmitter T, Bright TB. Unusually low surface recombination velocity on silicon and germanium surfaces. Physical Review Letters 1987; 57(2): 249-252. DOI: 10.1103/PhysRevLett.57.249
-
(1987)
Physical Review Letters
, vol.57
, Issue.2
, pp. 249-252
-
-
Yablonovitch, A.1
Allara, D.L.2
Chang, C.C.3
Gmitter, T.4
Bright, T.B.5
-
6
-
-
0033098599
-
The effect of emitter recombination on the effective lifetime of silicon wafers
-
Cuevas A. The effect of emitter recombination on the effective lifetime of silicon wafers. Solar Energy Materials & Solar Cells 1999; 57: 277-290.
-
(1999)
Solar Energy Materials & Solar Cells
, vol.57
, pp. 277-290
-
-
Cuevas, A.1
-
7
-
-
33847697578
-
Standard test method for carrier recombination lifetime in silicon wafers by noncontact measurement of photoconductivity decay by microwave reflectance
-
ASTM Standard F1535-94, American Society for Testing and Materials
-
ASTM Standard F1535-94. Standard test method for carrier recombination lifetime in silicon wafers by noncontact measurement of photoconductivity decay by microwave reflectance. American Society for Testing and Materials 1994.
-
(1994)
-
-
-
9
-
-
36549095754
-
The study of charge carrier kinetics in semiconductors by microwave conductivity measurements
-
DOI: 10.1063/1.340013
-
Kunst M, Beck G. The study of charge carrier kinetics in semiconductors by microwave conductivity measurements. Journal of Applied Physics 1986; 60(10): 3558-3566. DOI: 10.1063/1.340013
-
(1986)
Journal of Applied Physics
, vol.60
, Issue.10
, pp. 3558-3566
-
-
Kunst, M.1
Beck, G.2
-
10
-
-
0020748719
-
An if bridge technique for contactless measurement of the carrier lifetime in silicon wafers
-
Tiedje T, Haberman JI, Francis RW, Ghosh AK. An if bridge technique for contactless measurement of the carrier lifetime in silicon wafers. Journal of Applied Physics 1983; 54(5): 2499-2503.
-
(1983)
Journal of Applied Physics
, vol.54
, Issue.5
, pp. 2499-2503
-
-
Tiedje, T.1
Haberman, J.I.2
Francis, R.W.3
Ghosh, A.K.4
-
12
-
-
33847709268
-
Characterization of volume and surface recombination in industrial solar cell precursors by the effective lifetime reconstruction in variable injection
-
Munich
-
Bueno G, Recart F, Gutiérrez R, Rodriguez V, Hernando F, Jimeno JC. Characterization of volume and surface recombination in industrial solar cell precursors by the effective lifetime reconstruction in variable injection. Proceedings of the 17th European Photovoltaic Solar Energy Conversion, Munich, 2001; 1650-1653.
-
(2001)
Proceedings of the 17th European Photovoltaic Solar Energy Conversion
, pp. 1650-1653
-
-
Bueno, G.1
Recart, F.2
Gutiérrez, R.3
Rodriguez, V.4
Hernando, F.5
Jimeno, J.C.6
-
13
-
-
0000612857
-
Generalized analysis of quasi-steady-state and quasi-transient measurements of carrier lifetimes in semiconductors
-
DOI: 10.1063/1.371633
-
Nagel H, Berge C, Aberle AG. Generalized analysis of quasi-steady-state and quasi-transient measurements of carrier lifetimes in semiconductors. Journal of Applied Physics 1999; 86(11): 6218-6221. DOI: 10.1063/1.371633
-
(1999)
Journal of Applied Physics
, vol.86
, Issue.11
, pp. 6218-6221
-
-
Nagel, H.1
Berge, C.2
Aberle, A.G.3
-
14
-
-
33847739949
-
Lifetime improvement in screen printed bifacial solar cells on CZ substrates
-
Glasgow
-
Bueno G, Recart F, Hernando F, Rodríguez V, Gutiérrez R, Jimeno JC. Lifetime improvement in screen printed bifacial solar cells on CZ substrates. Proceedings of the 16th European Photovoltaic Solar Energy Conversion, Glasgow, 2000; 1404-1407.
-
(2000)
Proceedings of the 16th European Photovoltaic Solar Energy Conversion
, pp. 1404-1407
-
-
Bueno, G.1
Recart, F.2
Hernando, F.3
Rodríguez, V.4
Gutiérrez, R.5
Jimeno, J.C.6
-
15
-
-
0033323710
-
Recombination and trapping in multicrystalline silicon
-
DOI: 10.1109/16.791992
-
Cuevas A, Stocks M, Macdonald D, Kerr M, Samundsett C. Recombination and trapping in multicrystalline silicon. IEEE Transactions on Electron Devices 1999; 46(10): 2026-2034. DOI: 10.1109/16.791992
-
(1999)
IEEE Transactions on Electron Devices
, vol.46
, Issue.10
, pp. 2026-2034
-
-
Cuevas, A.1
Stocks, M.2
Macdonald, D.3
Kerr, M.4
Samundsett, C.5
-
16
-
-
0037415913
-
Space-charge region-dominated steady-state photoconductance in low-lifetime Si wafers
-
DOI: 10.1063/1.1541115
-
Bail M, Schulz M, Brendel R. Space-charge region-dominated steady-state photoconductance in low-lifetime Si wafers. Applied Physics Letters 2003; 82(5): 757-759. DOI: 10.1063/1.1541115
-
(2003)
Applied Physics Letters
, vol.82
, Issue.5
, pp. 757-759
-
-
Bail, M.1
Schulz, M.2
Brendel, R.3
-
18
-
-
1542306857
-
Experimental verification of the effect of depletion-region modulation on photoconductance lifetime measurements
-
DOI: 10.1063/1.1638618
-
Cousins PJ, Neuhaus DH, Cotter JE. Experimental verification of the effect of depletion-region modulation on photoconductance lifetime measurements. Journal of Applied Physics 2004; 95(4): 1854-1858. DOI: 10.1063/1.1638618
-
(2004)
Journal of Applied Physics
, vol.95
, Issue.4
, pp. 1854-1858
-
-
Cousins, P.J.1
Neuhaus, D.H.2
Cotter, J.E.3
-
20
-
-
0015491489
-
Die abhängigkeit der trägerbeweglichkeit in silizium von der konzentration der freien ladungsträger-I
-
Dannhäuser F. Die abhängigkeit der trägerbeweglichkeit in silizium von der konzentration der freien ladungsträger-I. Solid-State Electronics 1972; 15: 1371-1375.
-
(1972)
Solid-State Electronics
, vol.15
, pp. 1371-1375
-
-
Dannhäuser, F.1
-
21
-
-
0006406446
-
Guidelines for more accurate determination and interpretation of effective lifetime from measured quasi-steady-state photoconductance
-
Estes Park
-
Brody J, Rohatgi A, Ristow A. Guidelines for more accurate determination and interpretation of effective lifetime from measured quasi-steady-state photoconductance. 11th Workshop on Crystalline Silicon Solar Cell Materials and Processes, Estes Park, 2001; 163-167.
-
(2001)
11th Workshop on Crystalline Silicon Solar Cell Materials and Processes
, pp. 163-167
-
-
Brody, J.1
Rohatgi, A.2
Ristow, A.3
-
22
-
-
18044402362
-
Lifetime measurements by photoconductance techniques in wafers immersed in a passivating liquid
-
DOI: 10.1149/1.1354620
-
Lago-Aurrekoetxea R, Tobías I, del Cañizo C, Luque A. Lifetime measurements by photoconductance techniques in wafers immersed in a passivating liquid. Journal of The Electrochemical Society 2001; 148(4): 200-206. DOI: 10.1149/1.1354620
-
(2001)
Journal of The Electrochemical Society
, vol.148
, Issue.4
, pp. 200-206
-
-
Lago-Aurrekoetxea, R.1
Tobías, I.2
del Cañizo, C.3
Luque, A.4
-
23
-
-
9744268902
-
Self-consistent determination of the generation rate from photoconductance measurements
-
DOI: 10.1063/1.1807961
-
Trupke T, Bardos R. Self-consistent determination of the generation rate from photoconductance measurements. Applied Physics Letters 2004; 85(16): 3611-3613. DOI: 10.1063/1.1807961
-
(2004)
Applied Physics Letters
, vol.85
, Issue.16
, pp. 3611-3613
-
-
Trupke, T.1
Bardos, R.2
-
24
-
-
0036604597
-
Sensitivity analysis of two-spectrum separation of surface and bulk components of minority carrier lifetimes
-
Brody J, Rohatgi A. Sensitivity analysis of two-spectrum separation of surface and bulk components of minority carrier lifetimes. Solid-state Electronics 2002; 46: 859-866.
-
(2002)
Solid-state Electronics
, vol.46
, pp. 859-866
-
-
Brody, J.1
Rohatgi, A.2
-
25
-
-
6344237227
-
Advanced lifetime spectroscopy: Unambiguous determination of the electronic properties of the metastable defect in boron-doped Cz-Si
-
Osaka, DOI: 10.1109/WCPEC.2003. 1306094
-
Rein S, Lichtner P, Glunz SW. Advanced lifetime spectroscopy: unambiguous determination of the electronic properties of the metastable defect in boron-doped Cz-Si. Proceedings of the 3rd World Conference on Photovoltaic Solar Energy Conversion, Osaka, 2003; 1057-1060. DOI: 10.1109/WCPEC.2003. 1306094.
-
(2003)
Proceedings of the 3rd World Conference on Photovoltaic Solar Energy Conversion
, pp. 1057-1060
-
-
Rein, S.1
Lichtner, P.2
Glunz, S.W.3
-
26
-
-
0005858863
-
Mechanisms for the anomalous dependence of carrier lifetime on injection level and photoconductance on light intensity
-
DOI: 10.1063/1.1330768
-
Karazhanov SZ. Mechanisms for the anomalous dependence of carrier lifetime on injection level and photoconductance on light intensity. Journal of Applied Physics 2001; 89(1): 332-335. DOI: 10.1063/1.1330768
-
(2001)
Journal of Applied Physics
, vol.89
, Issue.1
, pp. 332-335
-
-
Karazhanov, S.Z.1
-
27
-
-
0032622269
-
Trapping of minority carriers in multicrystalline silicon
-
DOI: 10.1063/1.123663
-
Macdonald D, Cuevas A. Trapping of minority carriers in multicrystalline silicon. Applied Physics Letters 1999; 74(12): 1710-1712. DOI: 10.1063/1.123663
-
(1999)
Applied Physics Letters
, vol.74
, Issue.12
, pp. 1710-1712
-
-
Macdonald, D.1
Cuevas, A.2
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