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Volumn 15, Issue 2, 2007, Pages 123-142

A simulation-based method for the comprehensive analysis of effective lifetime from photoconductance

Author keywords

Lifetime; Photoconductance; Recombination

Indexed keywords

COMPUTER SIMULATION; DATA ACQUISITION; DIELECTRIC PROPERTIES; ELECTRIC FIELD EFFECTS; PARAMETER ESTIMATION; SILICON;

EID: 33847748956     PISSN: 10627995     EISSN: 1099159X     Source Type: Journal    
DOI: 10.1002/pip.714     Document Type: Article
Times cited : (3)

References (27)
  • 3
    • 0031097690 scopus 로고    scopus 로고
    • Prediction of the open-circuit voltage of solar cells from the steady-state photoconductance
    • Cuevas A, Sinton RA. Prediction of the open-circuit voltage of solar cells from the steady-state photoconductance. Progress in Photovoltaics: Research and Applications 1997; 5: 79-90.
    • (1997) Progress in Photovoltaics: Research and Applications , vol.5 , pp. 79-90
    • Cuevas, A.1    Sinton, R.A.2
  • 4
    • 0000703152 scopus 로고
    • Unusually low surface recombination velocity on silicon and germanium surfaces
    • DOI: 10.1103/PhysRevLett.57.249
    • Yablonovitch A, Allara DL, Chang CC, Gmitter T, Bright TB. Unusually low surface recombination velocity on silicon and germanium surfaces. Physical Review Letters 1987; 57(2): 249-252. DOI: 10.1103/PhysRevLett.57.249
    • (1987) Physical Review Letters , vol.57 , Issue.2 , pp. 249-252
    • Yablonovitch, A.1    Allara, D.L.2    Chang, C.C.3    Gmitter, T.4    Bright, T.B.5
  • 6
    • 0033098599 scopus 로고    scopus 로고
    • The effect of emitter recombination on the effective lifetime of silicon wafers
    • Cuevas A. The effect of emitter recombination on the effective lifetime of silicon wafers. Solar Energy Materials & Solar Cells 1999; 57: 277-290.
    • (1999) Solar Energy Materials & Solar Cells , vol.57 , pp. 277-290
    • Cuevas, A.1
  • 7
    • 33847697578 scopus 로고
    • Standard test method for carrier recombination lifetime in silicon wafers by noncontact measurement of photoconductivity decay by microwave reflectance
    • ASTM Standard F1535-94, American Society for Testing and Materials
    • ASTM Standard F1535-94. Standard test method for carrier recombination lifetime in silicon wafers by noncontact measurement of photoconductivity decay by microwave reflectance. American Society for Testing and Materials 1994.
    • (1994)
  • 9
    • 36549095754 scopus 로고
    • The study of charge carrier kinetics in semiconductors by microwave conductivity measurements
    • DOI: 10.1063/1.340013
    • Kunst M, Beck G. The study of charge carrier kinetics in semiconductors by microwave conductivity measurements. Journal of Applied Physics 1986; 60(10): 3558-3566. DOI: 10.1063/1.340013
    • (1986) Journal of Applied Physics , vol.60 , Issue.10 , pp. 3558-3566
    • Kunst, M.1    Beck, G.2
  • 10
    • 0020748719 scopus 로고
    • An if bridge technique for contactless measurement of the carrier lifetime in silicon wafers
    • Tiedje T, Haberman JI, Francis RW, Ghosh AK. An if bridge technique for contactless measurement of the carrier lifetime in silicon wafers. Journal of Applied Physics 1983; 54(5): 2499-2503.
    • (1983) Journal of Applied Physics , vol.54 , Issue.5 , pp. 2499-2503
    • Tiedje, T.1    Haberman, J.I.2    Francis, R.W.3    Ghosh, A.K.4
  • 13
    • 0000612857 scopus 로고    scopus 로고
    • Generalized analysis of quasi-steady-state and quasi-transient measurements of carrier lifetimes in semiconductors
    • DOI: 10.1063/1.371633
    • Nagel H, Berge C, Aberle AG. Generalized analysis of quasi-steady-state and quasi-transient measurements of carrier lifetimes in semiconductors. Journal of Applied Physics 1999; 86(11): 6218-6221. DOI: 10.1063/1.371633
    • (1999) Journal of Applied Physics , vol.86 , Issue.11 , pp. 6218-6221
    • Nagel, H.1    Berge, C.2    Aberle, A.G.3
  • 16
    • 0037415913 scopus 로고    scopus 로고
    • Space-charge region-dominated steady-state photoconductance in low-lifetime Si wafers
    • DOI: 10.1063/1.1541115
    • Bail M, Schulz M, Brendel R. Space-charge region-dominated steady-state photoconductance in low-lifetime Si wafers. Applied Physics Letters 2003; 82(5): 757-759. DOI: 10.1063/1.1541115
    • (2003) Applied Physics Letters , vol.82 , Issue.5 , pp. 757-759
    • Bail, M.1    Schulz, M.2    Brendel, R.3
  • 18
    • 1542306857 scopus 로고    scopus 로고
    • Experimental verification of the effect of depletion-region modulation on photoconductance lifetime measurements
    • DOI: 10.1063/1.1638618
    • Cousins PJ, Neuhaus DH, Cotter JE. Experimental verification of the effect of depletion-region modulation on photoconductance lifetime measurements. Journal of Applied Physics 2004; 95(4): 1854-1858. DOI: 10.1063/1.1638618
    • (2004) Journal of Applied Physics , vol.95 , Issue.4 , pp. 1854-1858
    • Cousins, P.J.1    Neuhaus, D.H.2    Cotter, J.E.3
  • 20
    • 0015491489 scopus 로고
    • Die abhängigkeit der trägerbeweglichkeit in silizium von der konzentration der freien ladungsträger-I
    • Dannhäuser F. Die abhängigkeit der trägerbeweglichkeit in silizium von der konzentration der freien ladungsträger-I. Solid-State Electronics 1972; 15: 1371-1375.
    • (1972) Solid-State Electronics , vol.15 , pp. 1371-1375
    • Dannhäuser, F.1
  • 21
    • 0006406446 scopus 로고    scopus 로고
    • Guidelines for more accurate determination and interpretation of effective lifetime from measured quasi-steady-state photoconductance
    • Estes Park
    • Brody J, Rohatgi A, Ristow A. Guidelines for more accurate determination and interpretation of effective lifetime from measured quasi-steady-state photoconductance. 11th Workshop on Crystalline Silicon Solar Cell Materials and Processes, Estes Park, 2001; 163-167.
    • (2001) 11th Workshop on Crystalline Silicon Solar Cell Materials and Processes , pp. 163-167
    • Brody, J.1    Rohatgi, A.2    Ristow, A.3
  • 22
    • 18044402362 scopus 로고    scopus 로고
    • Lifetime measurements by photoconductance techniques in wafers immersed in a passivating liquid
    • DOI: 10.1149/1.1354620
    • Lago-Aurrekoetxea R, Tobías I, del Cañizo C, Luque A. Lifetime measurements by photoconductance techniques in wafers immersed in a passivating liquid. Journal of The Electrochemical Society 2001; 148(4): 200-206. DOI: 10.1149/1.1354620
    • (2001) Journal of The Electrochemical Society , vol.148 , Issue.4 , pp. 200-206
    • Lago-Aurrekoetxea, R.1    Tobías, I.2    del Cañizo, C.3    Luque, A.4
  • 23
    • 9744268902 scopus 로고    scopus 로고
    • Self-consistent determination of the generation rate from photoconductance measurements
    • DOI: 10.1063/1.1807961
    • Trupke T, Bardos R. Self-consistent determination of the generation rate from photoconductance measurements. Applied Physics Letters 2004; 85(16): 3611-3613. DOI: 10.1063/1.1807961
    • (2004) Applied Physics Letters , vol.85 , Issue.16 , pp. 3611-3613
    • Trupke, T.1    Bardos, R.2
  • 24
    • 0036604597 scopus 로고    scopus 로고
    • Sensitivity analysis of two-spectrum separation of surface and bulk components of minority carrier lifetimes
    • Brody J, Rohatgi A. Sensitivity analysis of two-spectrum separation of surface and bulk components of minority carrier lifetimes. Solid-state Electronics 2002; 46: 859-866.
    • (2002) Solid-state Electronics , vol.46 , pp. 859-866
    • Brody, J.1    Rohatgi, A.2
  • 25
    • 6344237227 scopus 로고    scopus 로고
    • Advanced lifetime spectroscopy: Unambiguous determination of the electronic properties of the metastable defect in boron-doped Cz-Si
    • Osaka, DOI: 10.1109/WCPEC.2003. 1306094
    • Rein S, Lichtner P, Glunz SW. Advanced lifetime spectroscopy: unambiguous determination of the electronic properties of the metastable defect in boron-doped Cz-Si. Proceedings of the 3rd World Conference on Photovoltaic Solar Energy Conversion, Osaka, 2003; 1057-1060. DOI: 10.1109/WCPEC.2003. 1306094.
    • (2003) Proceedings of the 3rd World Conference on Photovoltaic Solar Energy Conversion , pp. 1057-1060
    • Rein, S.1    Lichtner, P.2    Glunz, S.W.3
  • 26
    • 0005858863 scopus 로고    scopus 로고
    • Mechanisms for the anomalous dependence of carrier lifetime on injection level and photoconductance on light intensity
    • DOI: 10.1063/1.1330768
    • Karazhanov SZ. Mechanisms for the anomalous dependence of carrier lifetime on injection level and photoconductance on light intensity. Journal of Applied Physics 2001; 89(1): 332-335. DOI: 10.1063/1.1330768
    • (2001) Journal of Applied Physics , vol.89 , Issue.1 , pp. 332-335
    • Karazhanov, S.Z.1
  • 27
    • 0032622269 scopus 로고    scopus 로고
    • Trapping of minority carriers in multicrystalline silicon
    • DOI: 10.1063/1.123663
    • Macdonald D, Cuevas A. Trapping of minority carriers in multicrystalline silicon. Applied Physics Letters 1999; 74(12): 1710-1712. DOI: 10.1063/1.123663
    • (1999) Applied Physics Letters , vol.74 , Issue.12 , pp. 1710-1712
    • Macdonald, D.1    Cuevas, A.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.