Sensitivity analysis of two-spectrum separation of surface and bulk components of minority carrier lifetimes

Solid-State Electronics

Volumn 46, Issue 6, 2002, Pages 859-866

  Brody, Jed ^a   Rohatgi, Ajeet ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Bulk; Photoconductance; Recombination; Surface

Indexed keywords

ANNEALING; DIELECTRIC MATERIALS; ELECTRIC CONDUCTIVITY; EPITAXIAL GROWTH; PASSIVATION; PHOTOCONDUCTIVITY; SENSITIVITY ANALYSIS; SILICON WAFERS; SPECTRUM ANALYSIS;

RECOMBINATION;

CHARGE CARRIERS;

EID: 0036604597     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00343-4     Document Type: Article

References (8)

1. Analysis of the interaction of a laser pulse with a silicon wafer: Determination of bulk lifetime and surface recombination velocity
2. Recombination at the silicon nitride/silicon interface
3. Electronic passivation of silicon surfaces by halogens
4. Relationship between effective carrier lifetimes in silicon determined under transient and steady-state conditions
5. Separation of bulk and surface recombination by steady state photoconductance measurements
6. Quasi-steady-state photoconductance, a new method for solar cell material and device characterization
7. Guidelines for more accurate determination and interpretation of effective lifetime from measured quasi-steady-state photoconductance
8. On the use of a bias-light correction for trapping effects in photoconductance-based lifetime measurements of silicon