Fully monolithic 8 watt Ku-band high power amplifier

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 2004, Pages 1161-1164

  Zhang, Qi ^a   Brown, Steven A ^a  

^a TRIQUINT SEMICONDUCTOR   (United States)

Author keywords

GaAs; Ku band; MMIC; pHEMT; Power amplifier; VSAT

Indexed keywords

GALLIUM ARSENIDE; KU-BAND; PHEMT; VSAT (VERY SMALL APERTURE TERMINAL);

CAPACITORS; COMPUTER SIMULATION; ELECTRIC POTENTIAL; GAIN MEASUREMENT; LOGIC DESIGN; MATHEMATICAL MODELS; POWER AMPLIFIERS; SIGNAL PROCESSING; SUBSTRATES; TRANSCONDUCTANCE;

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

EID: 4444333005     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. T. Shimura, T. Satoh, Y. Hasegawa and J. Fukaya, "A high power density, 6W MMIC for Ku/K-band applications," 2003 IEEE MTT-S Int. Microwave Symp. Dig., vol. 3, pp. 851-854, June 2003.
2. M. Cardullo, C. Page, D. Teeter and A. Platzker, "High efficiency X-Ku band MMIC power amplifiers," 1996 IEEE MTT-S Int. Microwave Symp. Dig., vol. 1, pp. 145-148, 1996.
3. TriQuint Semiconductor product TGA2502-EPU data sheet, May 2003.
4. K. Matsunaga, Y. Okamoto, M. Kuzuhara, "Ku-band 10 W high efficiency HJFET power amplifier," 1995 IEEE MTT-S Int. Microwave Symp. Dig., vol. 2, pp. 335-338, 1995.
5. Fujitsu product FLM1414-8F data sheet, August 1999.
6. K. Wang et al., "The S-probe a new, cost-effective, 4-Gamma method for evaluating mutli-stage amplifier stability" 1992 IEEE MTT-S Int. Microwave Symp. Dig., pp.829-832