35% PAE 6 W Ku-band power amplifier module

IEEE MTT-S International Microwave Symposium Digest

Volumn 3, Issue , 1999, Pages 955-958

  Ishimaru, Atsushi ^a   Maeda, Miki ^a   Yoshida, Tomohiro ^a   Ozaki, Juichi ^a   Kamihashi, Susumu ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

KU-BAND; OUTPUT POWER; POWER ADDED EFFICIENCY; X-BAND;

AMPLIFICATION; BANDWIDTH; CAPACITANCE; ELECTRIC POWER SUPPLIES TO APPARATUS; HIGH ELECTRON MOBILITY TRANSISTORS; INTEGRATED CIRCUIT LAYOUT; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; OPTIMIZATION;

POWER AMPLIFIERS;

EID: 0033360527     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. Y. Saito, T. Kuzuhara, T. Ohmori, K. Kai, H. Ishimura, H. Tokuda, "Ku-Band 20 W Power GaAs FETs", 1995 IEEE MTT-S Digest, pp. 343-346, 1995.
2. S. Arai, H. Tokuda, "MILLIMETERWAVE POWER HEMTs", Solid-state Electronics, vol. 41, no. 10, pp. 1575-1579, 1997
3. M. Cardullo, C. Page, D. Teeter, A. Platzker, "HIGH EFFICIENY. KU BAND MMIC POWER AMPLIFIERS", 1996 IEEE MTT-S Digest, pp. 145-148, 1996.
4. K. Matsunaga, Y. Okamoto, M. Kuzuhara, "Ku-Band 10 W High Efficiency HJFET Power Amplifier", 1995 IEEE MTT-S Digest, pp. 335-338, 1995.