Photothermal, photocarrier and Raman characterization of Te-doped GaSb

Journal of Applied Physics

Volumn 101, Issue 2, 2007, Pages

  Velazquez Hernandez R ^a   Garcia Rivera J ^a   Rodriguez Garcia, M E ^b   Jimenez Sandoval, S ^c   Mendoza Alvarez, J G ^c   Garcia, J A ^d  

^a CENTRO DE FÍSICA APLICADA Y TECNOLOGÍA AVANZADA   (Mexico)

^b UNIVERSIDAD NACIONAL AUTÓNOMA DE MÉXICO   (Mexico)

^c DEPARTAMENTO DE FÍSICA   (Mexico)

^d Photo Thermal Diagnostics Inc   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); HETEROJUNCTIONS; INFRARED RADIATION; RADIOMETRY; RAMAN SPECTROSCOPY; TELLURIUM;

GASB WAFERS; PHOTOCARRIER; PHOTOTHERMAL RADIOMETRY (PTR);

GALLIUM COMPOUNDS;

EID: 33847712200     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2409765     Document Type: Article

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