DRAM variable retention time

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 1992-December, Issue , 1992, Pages 807-810

  Restle, P J ^a   Park, J W ^a,b   Lloyd, B F ^a,b  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ELECTRON DEVICES; TEMPERATURE DISTRIBUTION;

CAPACITOR CELLS; MEMORY CELL; MULTI-STATE; TEMPERATURE DEPENDENCE OF RETENTION; TEST TECHNIQUES; TRANSITION RATES; TRENCH CAPACITORS; VARIABLE RETENTIONS;

DYNAMIC RANDOM ACCESS STORAGE;

EID: 85060999879     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1992.307481     Document Type: Conference Paper

References (6)

1. D. S. Yaney, C. Y. Lu, R. A. Kohler, MJ. Kelly, J. T. Nelson, 1987 IEDM Technical Digest, pp 336-338.
2. W. Trickle, Int. Conf. Mat. Process, Shanghai, Oct. 1988.
3. D. J. Bums, W. Sifre, M. W. Levi, Rome Lab. In House Report, no. RL-TR-91-359, Rome Lab., Griffiss AFB, N. Y. (Dec. 1991)
4. P. J. ResUe, A. Gnudi, IBM J Res. Develop. Vol. 34pp. 227-242 (1990).
5. M. J. Kirton, M. J. Uren, Adv. in Phys., Vol. 38, pp. 367-468, 1989.
6. T. Katayama et al, Proc. 1991IEEE-IRPS, pp 183-187.