Prediction of stochastic behavior in differential charging of nanopatterned dielectric surfaces during plasma processing

Journal of Applied Physics

Volumn 101, Issue 4, 2007, Pages

  Kenney, Jason A ^a   Hwang, Gyeong S ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTATIONAL METHODS; ELECTRIC FIELDS; MATHEMATICAL MODELS; NANOSTRUCTURES; PLASMA APPLICATIONS; SURFACE CHARGE;

COMPUTATIONAL DOMAINS; DIELECTRIC SURFACES; DIELECTRIC TRENCHES; NANOPATTERNED DIELECTRIC SURFACES;

DIELECTRIC MATERIALS;

EID: 33847655131     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2433134     Document Type: Article

References (16)

1. S. Iwata and A. Ishizaka, J. Appl. Phys. 79, 6653 (1996).
2. T. G. Northrop, Phys. Scr. 45, 475 (1992).
3. A. Barkan, N. Dangelo, and R. L. Merlino, Phys. Rev. Lett. 73, 3093 (1994).
4. H. B. Garrett, Rev. Geophys. 19, 577 (1981).
5. R. A. Gottscho, C. W. Jurgensen, and D. J. Vitkavage, J. Vac. Sci. Technol. B 10, 2133 (1992).
6. H. Shin, C. C. King, T. Horiuchi, and C. M. Hu, IEEE Electron Device Lett. 12, 404 (1991).
7. K. Hashimoto, Jpn. J. Appl. Phys., Part 1 33, 6013 (1994).
8. G. S. Hwang and K. P. Giapis, J. Vac. Sci. Technol. B 15, 70 (1997).
9. J. C. Arnold and H. H. Sawin, J. Appl. Phys. 70, 5314 (1991).
10. D. J. Economou and R. C. Alkire, J. Electrochem. Soc. 135, 941 (1988).
11. T. Kinoshita, M. Hane, and J. P. McVittie, J. Vac. Sci. Technol. B 14, 560 (1996).
12. J. Matsui, K. Maeshige, and T. Makabe, J. Phys. D 34, 2950 (2001).
13. T. Tatsumi, Y. Hikosaka, S. Morishita, M. Matsui, and M. Sekine, J. Vac. Sci. Technol. A 17, 1562 (1999).
14. M. Matsumoto and T. Nishimura, ACM Trans. Model. Comput. Simul. 8, 3 (1998).
15. A. B. Birtles, J. Phys. D 5, 1396 (1972).
16. P. A. Heimann and J. E. Olsen, J. Appl. Phys. 53, 546 (1982).