Impact of ion implantation statistics on VT fluctuations in MOSFETs: Comparison between decaborane and boron channel implants

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2000, Pages 134-135

  Tuinhout, Hans ^a   Widdershoven, Frans ^a   Stolk, Peter ^a   Schmitz, Jurriaan ^a   Dirks, Bert ^a   van der Tak, Karel ^a   Bancken, Pascal ^a   Politiek, Jarich ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

BORON COMPOUNDS; ION IMPLANTATION; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING; STATISTICS; SUBSTRATES; THRESHOLD VOLTAGE;

ION IMPLANTATION STATISTICS;

MOSFET DEVICES;

EID: 0033701270     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)