Theoretical and experimental study of charge carrier kinetics in crystalline silicon

Journal of Applied Physics

Volumn 85, Issue 11, 1999, Pages 7741-7754

  Hahneiser, Olaf ^a   Kunst, Marinus ^a  

^a HAHN MEITNER INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY CONDITIONS; CARRIER CONCENTRATION; CHARGE CARRIERS; COMPUTATIONAL METHODS; COMPUTER SIMULATION; ELECTRIC SPACE CHARGE; PHOTOCONDUCTIVITY; POISSON DISTRIBUTION; SEMICONDUCTOR DEVICE MODELS;

EXCESS CHARGE CARRIER KINETICS; SHOCKLEY-READ-HALL STATISTICS;

SILICON WAFERS;

EID: 0032615132     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.370579     Document Type: Article

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