Channel length reduction influence on harmonic distortion of graded-channel gate-all-around devices

ECS Transactions

Volumn 4, Issue 1, 2007, Pages 247-256

  Doria, R T ^a   Pavanello, M A ^a,b   Cerdeira, A ^c   Raskin, J P ^d   Flandre, D ^d  

^a CENTRO UNIVERSITÁRIO DA FEI   (Brazil)

^b UNIVERSITY OF SÃO PAULO   (Brazil)

^c DEPARTAMENTO DE FÍSICA   (Mexico)

^d UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

HARMONIC DISTORTION; HARMONIC GENERATION; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING;

ANALOG OPERATION; GATE-ALL-AROUND (GAA) DEVICES; HARMONIC DISTORTION-TO-GAIN RATIO; THIRD ORDER HARMONIC DISTORTION;

GATES (TRANSISTOR);

EID: 33847634699     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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