Impact of high-permittivity dielectrics on speed performances and power consumption in double-gate-based CMOS circuits

Journal of Non-Crystalline Solids

Volumn 353, Issue 5-7, 2007, Pages 639-644

  Loussier, X ^a   Munteanu, D ^a   Autran, J L ^a,b  

^a AIX MARSEILLE UNIVERSITÉ   (France)

^b INSTITUT UNIVERSITAIRE DE FRANCE   (France)

Author keywords

Devices; Dielectric properties, relaxation, electric modulus

Indexed keywords

DIELECTRIC MATERIALS; ELECTRIC INVERTERS; PERMITTIVITY; THIN FILMS;

CIRCUIT PERFORMANCES; DG CIRCUITS; STATIC POWER CONSUMPTION;

CMOS INTEGRATED CIRCUITS;

EID: 33847366540     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2006.11.016     Document Type: Article

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