Planar defects and double-domain epitaxy in epitaxial YSi2-x and ErSi2-x thin films on Si substrates

Journal of Electronic Materials

Volumn 32, Issue 11, 2003, Pages 1166-1170

  Tsai, W C ^a   Chi, K S ^a   Chen, L J ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Domain; Epitaxy; Rare earth (RE); Silicide; Stacking faults

Indexed keywords

EPITAXIAL GROWTH; ERBIUM COMPOUNDS; INTERFACES (MATERIALS); SEMICONDUCTING SILICON; STACKING FAULTS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; YTTRIUM COMPOUNDS;

DOUBLE DOMAIN EPITAXY; PLANAR DEFECTS EPITAXY; RARE EARTH SILICIDE FILMS; SILICON SUBSTRATES;

THIN FILMS;

EID: 0348107261     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-003-0007-4     Document Type: Article

References (16)

1. K.N. Tu. R.D. Thompson, and B.Y. Tsaur, Appl. Phys. Lett. 38, 626 (1981).
2. H. Norde, J. deSousa Pires, F. d'Heurle, F. Pesavento, S. Petersson, and P.A. Tove, Appl. Phys. Lett. 38, 865 (1981).
3. P.L. Janega, J. McCaffrey, and D. Landheer, Appl. Phys. Lett. 55, 1415 (1989).
4. T.L. Lee, L.J. Chem, and F.R. Chen, J. Appl. Phys. 71, 3307 (1992).
5. M.P. Siegal, F.H. Kaatz, W.R. Graham, J.J. Santiago, and J. Van der Spiegel, J. Appl. Phys. 66, 2999 (1989).
6. F.H. Kaatz, W.R. Graham, and J. van der Spiegel, Appl. Phys. Lett. 62, 1748 (1993).
7. M.P. Siegal, W.R. Graham, and J.J. Santiago-Aviles, J. Appl. Phys. 68, 574 (1990).
8. M. Siegal, L.J. Martinez-Miranda, J.J. Santiago-Aviles, W.R. Graham, and M.P. Siegal, J. Appl. Phys. 75, 1517 (1994).
9. N. Frangis, G. Van Tendeloo, J. Van Landuyt, P. Muret, and T.T.A. Nguyen, J. Alloys Compounds 234, 244 (1996).
10. A. Iandelli, A. Palenzona, and G.L. Olcese, J. Less-Common Met. 64, 213 (1979).
11. C. Preinesberger, S.K. Becker, S. Vandre, T. Kalka, and M. Dahne, J. Appl. Phys. 91, 1695 (2002).
12. Y. Chen, D.A.A. Ohlberg, and R.S. Williams, J. Appl. Phys. 91, 3213 (2002).
13. J. Nogami, B.Z. Liu, M.V. Katkov, C. Ohbuchi, and N.O. Birge, Phys. Rev. B 63, 233305 (2001).
14. Y. Chen, D.A.A. Ohlberg, and R.S. Williams, Mater. Sci. Eng. B87, 222 (2001).
15. J.E. Baglin, F.M. d'Heurle, and C.S. Petersson, Appl. Phys. Lett. 36, 594 (1980).
16. G.H. Shen, J.C. Chen, and L.J. Chen, Appl. Surf. Sci. 142, 332 (1999).