Thick cubic GaN film growth using ultra-thin low-temperature buffer layer by RF-MBE

Journal of Crystal Growth

Volumn 278, Issue 1-4, 2005, Pages 411-414

  Kimura, Ryuhei ^a   Suzuki, Takeaki ^a   Ouchi, Masamichi ^a   Ishida, Kouichi ^a   Takahashi, Kiyoshi ^a  

^a TEIKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

A1. Crystal structure; A1. Reflection high energy electron diffraction; A1. X ray diffraction; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

CRYSTAL STRUCTURE; FILM GROWTH; LOW TEMPERATURE EFFECTS; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; THIN FILMS; X RAY DIFFRACTION;

GAN EPILAYERS; GAN FILMS; LOW TEMPERATURE BUFFER; STOICHIOMETRIC GROWTH;

GALLIUM NITRIDE;

EID: 18444379710     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.01.058     Document Type: Conference Paper

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