Contribution of long lived metastable states to the PL of InP dots in indirect band-gap barrier layers

EPJ Applied Physics

Volumn 37, Issue 1, 2007, Pages 15-18

  Seguin, R ^a   Guillet, T ^a   Taliercio, T ^a   Lefebvre, P ^a   Bretagnon, T ^a   Zhang, X B ^b   Ryou, J H ^b   Dupuis, R D ^b  

^a UNIVERSITÉ MONTPELLIER 2   (France)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; HOLE MOBILITY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM PHOSPHIDE; SPECTRUM ANALYSIS;

BAND GAP BARRIER LAYERS; CONDUCTION BANDS; METASTABLE STATES; NON EXPONENTIAL TIME DECAY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33847239519     PISSN: 12860042     EISSN: 12860050     Source Type: Journal    
DOI: 10.1051/epjap:2007006     Document Type: Article

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