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Volumn 98, Issue 6, 2005, Pages

Interface alloy mixing effect in the growth of self-assembled InP quantum dots on InAlGaP matrices by metalorganic chemical-vapor deposition

(5) Zhang, X B a Ryou, J H a Dupuis, R D a Walter, G b Holonyak Jr , N b

a GEORGIA INSTITUTE OF TECHNOLOGY (United States)

b University of Illinois at Urbana Champaign (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GROWTH TEMPERATURES; INITIAL CAPPING; INTERFACE ALLOY MIXING EFFECT; THERMAL ANNEALING;

CATHODOLUMINESCENCE; CRYSTAL GROWTH; INDIUM COMPOUNDS; INTERFACES (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; RAPID THERMAL ANNEALING; SELF ASSEMBLY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 26244437647 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.2043234 Document Type: Article

Times cited : (3)

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