The reverse leakage current of present-day manufactured silicon PN junctions and their maximum permissible operation temperature

2005 International Semiconductor Device Research Symposium

Volumn 2005, Issue , 2005, Pages 288-289

  Obreja, Vasile V N ^a  

^a NATIONAL INSTITUTE FOR RESEARCH AND DEVELOPMENT IN MICROTECHNOLOGIES   (Romania)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33847226276     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. V.V.N. Obreja, C. Codreanu, K.I. Nuttall, "Reverse leakage current instability of power fast switching diodes operating at high junction temperature" in Proceedings 36th IEEE Power Electronics Specialists Conference(PESC2005), 2005, Recife, Brazil, pp. 537-540
2. V.V.N. Obreja, "On the leakage current of present-day manufactured semiconductor junctions", Solid-State Electronics, vol.49, no.1, pp. 49-57, 2000
3. V.V.N. Obreja, "An experimental investigation on the nature of reverse current of power silicon PN junctions", IEEE Trans. Electron Devices, vol..ED-49, pp. 155-163, 2002
4. V.V.N. Obreja, K.I. Nuttall, O. Buiu, "Electrical Characteristics of Present-Day Manufactured Power Semiconductor PN Junctions and the I-V Characteristic Theory" in Proceedings International Semiconductor Conference (CAS2003), 2003, Sinaia, Romania, pp.253-256