Single-frequency cw vertical external cavity surface emitting semiconductor laser at 1003 nm and 501 nm by intracavity frequency doubling

Applied Physics B: Lasers and Optics

Volumn 86, Issue 3, 2007, Pages 503-510

  Jacquemet, M ^a   Domenech, M ^a   Lucas Leclin, G ^a   Georges, P ^a   Dion, J ^b   Strassner, M ^b   Sagnes, I ^b   Garnache, A ^c  

^a INSTITUT D'OPTIQUE GRADUATE SCHOOL   (France)

^b UNIV PARIS SUD   (France)

^c UNIVERSITÉ MONTPELLIER II   (France)

Author keywords

[No Author keywords available]

Indexed keywords

FREQUENCY DOUBLERS; HEAT RESISTANCE; NATURAL FREQUENCIES; PUMPING (LASER); SILICON; SUBSTRATES;

LASER OSCILLATION; SINGLE FREQUENCY LASER EMISSION; SOLID LIQUID INTERDIFFUSION; SURFACE EMITTING SEMICONDUCTOR LASERS;

SEMICONDUCTOR LASERS;

EID: 33847186330     PISSN: 09462171     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00340-006-2499-0     Document Type: Article

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