Impact of back side circuit edit on active device performance in bulk silicon ICs

Proceedings - International Test Conference

Volumn 2005, Issue , 2005, Pages 1236-1244

  Boit, C ^a   Kerst, U ^a   Schlangen, R ^a   Kabakow, A ^a   Le Roy, E ^b   Lundquist, T R ^b   Pauthner, S ^c  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b Credence Systems Corporation   (United States)

^c INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC STRUCTURE; FIELD EFFECT SEMICONDUCTOR DEVICES; OSCILLATORS (ELECTRONIC); SILICON ON INSULATOR TECHNOLOGY;

BACK SIDE CIRCUIT EDIT; PARALLEL THINNING; RING OSCILLATORS; SILICON THICKNESSES;

THIN FILM CIRCUITS;

EID: 33847168004     PISSN: 10893539     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/TEST.2005.1584092     Document Type: Conference Paper

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