Contacting silicon with FIB for backside circuit edit

Proceedings of the 30th International Symposium for Testing and Failure Analysis, ISTFA 2004

Volumn , Issue , 2004, Pages 157-161

  Boit, C ^a   Kerst, U ^a   Sadewater, P ^a   Leihkauf, R ^a,b   Schomann S ^a,c   Roy, E Le ^a,d   Lundquist, T ^a,d  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b HAHN MEITNER INSTITUT   (Germany)

^c INFINEON TECHNOLOGIES AG   (Germany)

^d Credence Systems Corporation   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; DIFFUSION; ELECTRIC INSULATORS; ETCHING; EXTRAPOLATION; FOCUSING; INTEGRATED CIRCUIT LAYOUT; INTERCONNECTION NETWORKS; ION BEAMS; LITHOGRAPHY; MICROPROCESSOR CHIPS; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS;

CIRCUIT EDIT (CE); ENDPOINT DETECTION; FOCUSED ION BEAMS (FIB); SHALLOW TRENCH ISOLATION (STI);

SEMICONDUCTING SILICON;

EID: 10444220297     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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