Study on a Single NFET Degradation After Circuit Modification with FIB

Conference Proceedings from the International Symposium for Testing and Failure Analysis

Volumn , Issue , 2002, Pages 215-219

  Lehner, Werner ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DYNAMIC RANDOM ACCESS STORAGE; FAILURE ANALYSIS; GALLIUM; INTEGRATED CIRCUIT LAYOUT; ION IMPLANTATION; IRRADIATION; TRANSISTORS;

CIRCUIT MODIFICATION; FOCUSED ION BEAM (FIB) SYSTEMS; GATE LINE CONTACTING;

MOS DEVICES;

EID: 1542300291     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)

1. Ann N Campbell et. al. The 25 th Int. Symp. for Testing and Failure Analysis "Focused Ion Beam Induced Effects on MOS Transistor Parameters" (1999)
2. Ann N Campbell et. al. "Effects of FIB Irradiation on MOS Transistors" IRPS '97 (1997)