Transistor and circuit design for 100-200 GHz ICs

Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC

Volumn , Issue , 2004, Pages 207-210

  Rodwell, M ^a   Griffith, Z ^a   Scott, D ^a   Wei, Y ^a   Dong, Y ^a   Paidi, V ^a   Dahlstrom M ^a   Parthasarathy, N ^a   Kadow, C ^a   Urteaga, M ^b   Pierson, R ^b   Rowell, P ^b   Brar, B ^b   Lee, S ^c   Nguyen, N ^c   Nguyen, C ^c  

^a University of California   (United States)

^b ROCKWELL SCIENTIFIC COMPANY   (United States)

^c Global Communication Semiconductors   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CIRCUIT DESIGN; EMITTER DEPLETION CAPACITANCE; FREQUENCY DIVIDERS; LOAD RESISTANCE;

BANDWIDTH; CURRENT DENSITY; ELECTRON TRANSPORT PROPERTIES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR JUNCTIONS;

INTEGRATED CIRCUITS;

EID: 21644451322     PISSN: 15508781     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CSICS.2004.1392539     Document Type: Conference Paper

References (8)

1. M. Rodwell et al, International Journal of High Speed Electronics and Systems, Vol. 11, No. 1, pp. 159-215.
2. I. Harrison et al, 2003 IEEE Indium Phosphide and Related Materials Conference, May, Santa Barbara, CA.
3. Z. Griffith et al, Submitted to IEEE Electron Device Letters
4. Z. Griffith et al, 2004 IEEE BCTM, September, Montreal.
5. S. Oka et al, International Journal of High Speed Electronics and Systems, Vol. 11, No. 1, pp. 115-136.
6. M. Urteaga et al, 2004 IEEE Device Research Conference, June, Notre Dame, Ind.
7. Y. Wei et al, 2004 IEEE Device Research Conference, June, Notre Dame, Ind.
8. Y. Dong et al, 2004 IEEE Device Research Conference, June, Notre Dame, Ind.