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Volumn 2006, Issue , 2006, Pages 383-386

A 25 GHz quadrature voltage controlled ring oscillator in 0.12μm SiGe HBT (student paper)

Author keywords

Bipolar; Millimeter wave integrated circuits; Quadrature ring oscillator; SiGe; Voltage controlled oscillator

Indexed keywords

ACOUSTIC NOISE MEASUREMENT; CMOS INTEGRATED CIRCUITS; INTEGRATED CIRCUITS; MILLIMETER WAVES; OPTIMIZATION; PRODUCT DESIGN;

EID: 33847029184     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SMIC.2005.1588003     Document Type: Conference Paper
Times cited : (23)

References (12)
  • 2
    • 10444267265 scopus 로고    scopus 로고
    • A Fully Integrated 24- GHz Eight-Element Phased-Array Receiver in Silicon
    • Dec
    • X. Guan, H. Hashemi, and A. Hajimiri "A Fully Integrated 24- GHz Eight-Element Phased-Array Receiver in Silicon," IEEE J. Solid-State Circuits, vol.39,no.12 pp. 2311 - 2320, Dec. 2004.
    • (2004) IEEE J. Solid-State Circuits , vol.39 , Issue.12 , pp. 2311-2320
    • Guan, X.1    Hashemi, H.2    Hajimiri, A.3
  • 3
    • 0034271311 scopus 로고    scopus 로고
    • A wide-bandwidth Si/SiGe HBT direct conversion sub-harmonic mixer/downconverter
    • Sept
    • L. Sheng, J. C. Jensen, and L. E. Larson "A wide-bandwidth Si/SiGe HBT direct conversion sub-harmonic mixer/downconverter," IEEE J. Solid-State Circuits, vol.35, no.9 pp. 1329 - 1337, Sept. 2000.
    • (2000) IEEE J. Solid-State Circuits , vol.35 , Issue.9 , pp. 1329-1337
    • Sheng, L.1    Jensen, J.C.2    Larson, L.E.3
  • 4
    • 0036503879 scopus 로고    scopus 로고
    • J. D. van der Tang, D. Kasperkovitz, and A. van Roermund, A 9.8-11.5 GHz quadrature ring oscillator for optical receivers, IEEE J. Solid-State Circuits, 37, no.3 pp. 438-432, March. 2002.
    • J. D. van der Tang, D. Kasperkovitz, and A. van Roermund, "A 9.8-11.5 GHz quadrature ring oscillator for optical receivers," IEEE J. Solid-State Circuits, vol.37, no.3 pp. 438-432, March. 2002.
  • 8
    • 22944457518 scopus 로고    scopus 로고
    • CBO Separation and Sharpness of Breakdown in High-Speed Bipolar Transistors
    • July
    • CBO Separation and Sharpness of Breakdown in High-Speed Bipolar Transistors", IEEE Electron Devices Lett., vol. 26, no. 7, July 2005, pp. 479-482.
    • (2005) IEEE Electron Devices Lett , vol.26 , Issue.7 , pp. 479-482
    • Bolognesi, C.R.1
  • 12
    • 0036575795 scopus 로고    scopus 로고
    • t in a manufacturable technology, IEEE Electron Devices Lett., 23, no. 5, pp. 258-260, 2002.
    • t in a manufacturable technology," IEEE Electron Devices Lett., vol. 23, no. 5, pp. 258-260, 2002.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.