Triangular pattern formation on silicon through self-organization of GaN nanoparticles

Applied Surface Science

Volumn 253, Issue 10, 2007, Pages 4773-4776

  Prabhakaran, Kuniyil ^a,b   Schwenzer, Birgit ^c   DenBaars, Steven P ^c   Mishra, Umesh K ^c  

^a STANFORD UNIVERSITY   (United States)

^b NTT Basic Research Laboratories   (Japan)

^c University of California   (United States)

Author keywords

GaN; Luminescent; Nanoparticles; Self organization; Silicon; Triangular pattern

Indexed keywords

AMMONIA; ANNEALING; GALLIUM NITRIDE; LUMINESCENCE; PHASE TRANSITIONS; SEMICONDUCTING SILICON;

LOW-TEMPERATURE REACTION; TRIANGULAR PATTERN; TRIANGULAR STRUCTURES;

NANOSTRUCTURED MATERIALS;

EID: 33847024513     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2006.10.062     Document Type: Article

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