Amorphous pockets in Si: Comparison of coupled molecular dynamics and TEM image contrast simulations with experimental results

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 255, Issue 1 SPEC. ISS., 2007, Pages 105-109

  Otto, G ^a,b   Hobler, G ^a   Palmetshofer, L ^c   Pongratz, P ^a  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

^b Secon Semiconductor Equipment GmbH   (Austria)

^c JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

Author keywords

Amorphous pocket; Ion implantation; Molecular dynamics simulation; Multislice image calculation; Radiation damage; TEM; Transmission electron microscopy

Indexed keywords

ANNEALING; ATOMS; COMPUTER SIMULATION; IMAGE PROCESSING; ION IMPLANTATION; MOLECULAR DYNAMICS; TRANSMISSION ELECTRON MICROSCOPY;

AMORPHOUS POCKET; MOLECULAR DYNAMICS SIMULATION; MULTISLICE IMAGE CALCULATION; THERMAL ANNEALING;

AMORPHOUS SILICON;

EID: 33847004019     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2006.11.020     Document Type: Article

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