Mechanism of via failure in copper/organosilicate glass interconnects induced by oxidation

Thin Solid Films

Volumn 515, Issue 7-8, 2007, Pages 3875-3880

  Min, Woo Sig ^a   Kim, Dong Joon ^a   Pyo, Sung Gyu ^a   Park, Sang Jong ^a   Choi, Jin Tae ^b   Kim, Sibum ^a  

^a Hynix Semiconductor Inc   (South Korea)

^b Hynix Semiconductor Inc   (South Korea)

Author keywords

Annealing; Copper interconnect; Organosilicate glass (OSG); Via resistance

Indexed keywords

ANNEALING; COPPER; ORGANOMETALLICS; OXIDATION; PHYSICAL VAPOR DEPOSITION; SILICATES;

COPPER INTERCONNECTS; DUAL DAMASCENE (DD); HIGH TEMPERATURE ANNEALING; ORGANOSILICATE GLASS (OSG);

ELECTRIC POWER SYSTEM INTERCONNECTION;

EID: 33846978091     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.10.109     Document Type: Article

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