Optically induced hysteresis of bilateral p-i-n junctions incorporated with InAs quantum dots

Semiconductor Science and Technology

Volumn 21, Issue 12, 2006, Pages 1533-1536

  Xu, Xiulai ^a   Williams, David A ^a  

^a HITACHI CAMBRIDGE LABORATORY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

HYSTERESIS; OPTICAL PROPERTIES; PHOTONS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS;

GATING QUANTUM DOTS; P-I-N JUNCTIONS; SINGLE-PHOTON DETECTION;

SEMICONDUCTOR JUNCTIONS;

EID: 33846893894     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/21/12/005     Document Type: Article

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