Spatially resolved detection of electroluminescence from lateral p-n junctions on GaAs (111)A patterned substrates using a near-field scanning optical microscope

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 36, Issue 7 B, 1997, Pages

  Saito, Nobuo ^a   Sato, Fumio ^a   Takizawa, Kuniharu ^a   Kusano, Jun ichi ^a   Okumura, Hideyo ^a   Aida, Tahito ^a   Saiki, Toshiharu ^a   Ohtsu, Motoichi ^a  

^a NHK SCIENCE AND TECHNICAL RESEARCH LABORATORIES   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROLUMINESCENCE; FIELD EMISSION MICROSCOPES; MOLECULAR BEAM EPITAXY; PHOTODETECTORS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SILICON; SUBSTRATES;

PATTERNED SUBSTRATE; SCANNING OPTICAL MICROSCOPE;

SEMICONDUCTOR JUNCTIONS;

EID: 0031192892     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.l896     Document Type: Article

References (15)