Mechanisms of current flow in p-TlGaSe2 single crystals

Semiconductor Science and Technology

Volumn 21, Issue 12, 2006, Pages 1633-1638

  Seyidov, Mirhasan Yu ^a,b   Sahin, Y ^a   Aslan, M H ^a   Suleymanov, R A ^a,b  

^a GEBZE TECHNICAL UNIVERSITY   (Turkey)

^b INSTITUTE OF PHYSICS   (Azerbaijan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRON MOBILITY; HEATING; HOLE MOBILITY; OHMIC CONTACTS; SEMICONDUCTOR DOPING; THERMAL EFFECTS;

CURRENT FLOW; CURRENT OSCILLATIONS; UNDOPED CRYSTALS;

SINGLE CRYSTALS;

EID: 33846864452     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/21/12/022     Document Type: Article

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