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Volumn 21, Issue 2, 2006, Pages 171-174
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The effect of thermal annealing on impurity states in ferroelectric- semiconductor TlGaSe2 within the incommensurate phase
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Author keywords
[No Author keywords available]
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Indexed keywords
ANNEALING;
CRYSTAL IMPURITIES;
CRYSTALS;
ELECTRIC CONDUCTIVITY;
FERROELECTRIC MATERIALS;
THALLIUM COMPOUNDS;
THERMOANALYSIS;
FERROELECTRIC- SEMICONDUCTORS;
IMPURITY STATES;
THERMAL ANNEALING;
THERMALLY STIMULATED CONDUCTIVITY;
SEMICONDUCTOR MATERIALS;
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EID: 30744456764
PISSN: 02681242
EISSN: 13616641
Source Type: Journal
DOI: 10.1088/0268-1242/21/2/013 Document Type: Article |
Times cited : (23)
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References (16)
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