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Physica B: Condensed Matter

Volumn 391, Issue 1, 2007, Pages 169-173

The influence of growth mode on quality of GaN films and blue LED wafers grown by MOCVD

(5) Li, S T a Jiang, F Y b Fan, G H a Fang, W Q b Wang, L b

a SOUTH CHINA NORMAL UNIVERSITY (China)

b NANCHANG UNIVERSITY (China)

Author keywords

Double crystal X ray diffraction; ECV; GaN; LED; MOCVD

Indexed keywords

GALLIUM NITRIDE; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTOR GROWTH; SILICON WAFERS; X RAY DIFFRACTION ANALYSIS;

3D GROWTH TIME; DOUBLE CRYSTAL X-RAY DIFFRACTION; FULL-WIDTH AT HALF-MAXIMUM (FWHM) VALUES; LED OUTPUT POWER;

SEMICONDUCTING FILMS;

EID: 33846818871 PISSN: 09214526 EISSN: None Source Type: Journal
DOI: 10.1016/j.physb.2006.09.014 Document Type: Article

Times cited : (23)

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