Formation of the Si/Cu interface

Surface and Interface Analysis

Volumn 30, Issue 1, 2000, Pages 570-573

  Rojas, C ^a   Roman E ^b   Martin Gago J A ^b  

^a EPFL   (Switzerland)

^b INSTITUTO DE CIENCIA DE MATERIALES DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ATOMIC FORCE MICROSCOPY; AUGER ELECTRON SPECTROSCOPY; COPPER; EVAPORATION; GROWTH (MATERIALS); POLYCRYSTALLINE MATERIALS; SCHOTTKY BARRIER DIODES;

INTENSITY EVOLUTION; ULTRAVIOLET PHOTOEMISSION SPECTROSCOPY;

INTERFACES (MATERIALS);

EID: 0034245193     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/1096-9918(200008)30:1<570::AID-SIA752>3.0.CO;2-L     Document Type: Article

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