Electronic structure and electrical conductivity of amorphous Si-Ti alloys manifesting the metal-insulator transition

Journal of the Physical Society of Japan

Volumn 69, Issue 3, 2000, Pages 777-784

  Kawade, Katsuya ^a   Suzuki, Atsuko ^a   Tanaka, Kazuhide ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Amorphous Si Ti alloys; DV X cluster calculation; Electrical conductivity; Localization; Metal insulator transition; Variable range hopping; XPS and UPS

Indexed keywords

EID: 0034409770     PISSN: 00319015     EISSN: None     Source Type: Journal    
DOI: 10.1143/JPSJ.69.777     Document Type: Article

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