Donor levels and the microscopic structure of the DX center in n-type Si-dopP grown by molecular-beam epitaxy

Physical Review B - Condensed Matter and Materials Physics

Volumn 53, Issue 12, 1996, Pages 7851-7862

  Makinen J ^a   Laine, T ^a   Partanen, J ^a   Saarinen, K ^a   Hautojarvi P ^a   Tappura, K ^b   Hakkarainen, T ^b   Asonen, H ^b   Pessa, M ^b  

^a AALTO UNIVERSITY   (Finland)

^b TAMPERE UNIVERSITY OF TECHNOLOGY   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0039233402     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.53.7851     Document Type: Article

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