High-field electrical transport and breakdown behavior of double-walled carbon nanotube field-effect transistors

Carbon

Volumn 45, Issue 4, 2007, Pages 760-765

  Wang, S ^a   Liang, X L ^a   Chen, Q ^a   Yao, K ^a   Peng, L M ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ENERGY GAP; FIELD EFFECT TRANSISTORS; NANOTECHNOLOGY;

DOUBLE-WALLED CARBON NANOTUBE; ELECTRICAL TRANSPORT; SHELL-BY-SHELL BREAKDOWN;

CARBON NANOTUBES;

EID: 33846467140     PISSN: 00086223     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.carbon.2006.11.032     Document Type: Article

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