Micro-crack-free high power blue-violet GaN-based laser diodes grown on maskless epitaxial lateral overgrown GaN/sapphire

Journal of Crystal Growth

Volumn 298, Issue SPEC. ISS, 2007, Pages 695-698

  Lee, Sung Nam ^a   Paek, H S ^a   Ryu, H Y ^a   Son, J K ^a   Sakong, T ^a   Jang, T ^a   Choi, K K ^a   Sung, Y J ^a   Kim, Y H ^a   Kim, H K ^a   Chae, S H ^a   Ha, K H ^a   Chae, J H ^a   Kim, K S ^a   Kwak, J S ^b   Nam, O H ^a   Park, Y ^a  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^b Sunchon National University   (South Korea)

Author keywords

A1. Stresses; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B3. Laser diodes

Indexed keywords

ANISOTROPY; CLADDING (COATING); EPITAXIAL GROWTH; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROCRACKS; SAPPHIRE; TENSILE STRESS;

ALGAN CLADDING LAYER; OPTICAL CONFINEMENT FACTOR (OCF); TENSILE STRAIN; THRESHOLD CURRENT;

SEMICONDUCTOR LASERS;

EID: 33846460023     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.171     Document Type: Article

References (9)

1. Lee S.N., Son J.K., Paek H.S., Sakong T., Lee W., Kim K.H., Kim S.S., Lee Y.J., Noh D.Y., Yoon E., Nam O.H., and Park Y. Phys. Status Solidi C 1 (2004) 2458
2. Han J., Waldrip K.E., Lee S.R., Figiel J.J., Hearne S.J., Petersen G.A., and Myers S.M. Appl. Phys. Lett. 78 (2001) 67
3. Lee I.H., Kim T.G., and Park Y. J. Crystal Growth 234 (2002) 305
4. Jin R.Q., Liu J.P., Zhang J.C., and Yang H. J. Crystal Growth 268 (2004) 35
5. Sun Q., Zhang J.C., Huang Y., Chen J., Wang F.F., Wang H., Li D.Y., Wang Y.T., Zhang S.M., Yang H., Zhou C.L., Guo L.P., and Jia Q.J. Appl. Surf. Sci. 252 (2006) 2043
6. Asano T., Takeya M., Tojyo T., Mizuno T., Ikeda S., Shibuya K., Hino T., Uchida S., and Ikeda M. Appl. Phys. Lett. 80 (2002) 3497
7. Paek H.S., Sakong T., Lee S.N., Son J.K., Ryu H.Y., Nam O.H., and Park Y. Physica B 376 (2006) 499
8. Lee S.N., K Son J., Paek H.S., Sakong T., Ha K.H., Nam O.H., Park Y., and Yoon E. Appl. Phys. Lett. 88 (2006) 111101
9. Romano L.T., Van de Walle C.G., Ager III J.W., Gotz W., and Kern R.S. J. Appl. Phys. 87 (2000) 7745