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Volumn 376-377, Issue 1, 2006, Pages 499-501
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Growth and characterization of AlxGa1-xN LEO substrates
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Author keywords
Al composition; GaN; LD; LEO
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Indexed keywords
ALUMINUM;
CRACK INITIATION;
CRYSTAL GROWTH;
CURRENT DENSITY;
DISLOCATIONS (CRYSTALS);
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
MORPHOLOGY;
OPTICAL MICROSCOPY;
PHOTOLUMINESCENCE;
SAPPHIRE;
SEMICONDUCTOR LASERS;
SUBSTRATES;
ALXGA1-XN LEO;
LASER DIODES;
CRYSTAL DEFECTS;
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EID: 33645151257
PISSN: 09214526
EISSN: None
Source Type: Journal
DOI: 10.1016/j.physb.2005.12.127 Document Type: Conference Paper |
Times cited : (3)
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References (9)
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