Hall effect measurement of InAsN alloy films grown directly on GaAs(001) substrates by RF-MBE

Physica Status Solidi C: Conferences

Volumn , Issue 7, 2003, Pages 2765-2768

  Kuroda, M ^a   Katayama, R ^a   Nishio, S ^a   Onabe, K ^a   Shiraki, Y ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOY FILM; BAND GAP ENERGY; BLUE SHIFT; BURSTEIN-MOSS EFFECTS; BURSTEIN-MOSS SHIFT; FUNDAMENTAL ABSORPTION EDGE; HALL EFFECT MEASUREMENT; NITROGEN CONTENT;

CARRIER CONCENTRATION; DOPPLER EFFECT; HALL EFFECT; METALLIC FILMS; NITRIDES; NITROGEN;

ENERGY GAP;

EID: 70450150575     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200303490     Document Type: Conference Paper

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