Photoluminescence and Hall studies of GaN:Fe and (Ga,Fe)N:Mg layers

Physica Status Solidi (A) Applications and Materials Science

Volumn 204, Issue 1, 2007, Pages 86-91

  Wegscheider, M ^a   Simbrunner, C ^a   Przybylinska H ^b   Kiecana, M ^b   Sawicki, M ^b   Navarro Quezada, A ^a   Sitter, H ^a   Jantsch, W ^a   Dietl, T ^b,c   Bonanni, A ^a  

^a JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^b INSTITUTE OF PHYSICS   (Poland)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

LUMINESCENCE BANDS; NEAR-BAND EDGE EXCITONIC EMISSION; ROOM TEMPERATURE; TEMPERATURE DEPENDENT PHOTOLUMINESCENCE;

CARRIER CONCENTRATION; DOPING (ADDITIVES); HALL EFFECT; IRON; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; ULTRAVIOLET RADIATION;

GALLIUM NITRIDE;

EID: 33846439363     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200673029     Document Type: Conference Paper

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